skip to main content

SciTech ConnectSciTech Connect

Title: Highly Sensitive Phototransistors Based on Two-Dimensional GaTe Nanosheets with Direct Bandgap

Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2]
  1. Harbin Institute of Technology
  2. ORNL
  3. Chinese Academy of Sciences (CAS), Institute of Semiconductors
Publication Date:
OSTI Identifier:
1130835
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Research; Journal Volume: 7; Journal Issue: 5
Publisher:
Springer
Research Org:
Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
ORNL LDRD Director's R&D
Country of Publication:
United States
Language:
English