Kapitza resistance of Si/SiO2 interface
Abstract
A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.
- Authors:
- Publication Date:
- Research Org.:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Org.:
- DOE - SC
- OSTI Identifier:
- 1129966
- Report Number(s):
- INL/JOU-14-31168
- DOE Contract Number:
- DE-AC07-05ID14517
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 8
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Kapitza resistance; molecular dynamics simulation; phonon dynamics; thermal transport
Citation Formats
Deng, Bowen, Chenatynskiy, Aleksandr, Khafizov, Marat, Hurley, David, and Phillpot, Simon. Kapitza resistance of Si/SiO2 interface. United States: N. p., 2014.
Web.
Deng, Bowen, Chenatynskiy, Aleksandr, Khafizov, Marat, Hurley, David, & Phillpot, Simon. Kapitza resistance of Si/SiO2 interface. United States.
Deng, Bowen, Chenatynskiy, Aleksandr, Khafizov, Marat, Hurley, David, and Phillpot, Simon. 2014.
"Kapitza resistance of Si/SiO2 interface". United States.
@article{osti_1129966,
title = {Kapitza resistance of Si/SiO2 interface},
author = {Deng, Bowen and Chenatynskiy, Aleksandr and Khafizov, Marat and Hurley, David and Phillpot, Simon},
abstractNote = {A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.},
doi = {},
url = {https://www.osti.gov/biblio/1129966},
journal = {Journal of Applied Physics},
number = 8,
volume = 115,
place = {United States},
year = {Sat Feb 01 00:00:00 EST 2014},
month = {Sat Feb 01 00:00:00 EST 2014}
}
Other availability
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.