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Title: Kapitza resistance of Si/SiO2 interface

Abstract

A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
DOE - SC
OSTI Identifier:
1129966
Report Number(s):
INL/JOU-14-31168
DOE Contract Number:  
DE-AC07-05ID14517
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 115; Journal Issue: 8
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Kapitza resistance; molecular dynamics simulation; phonon dynamics; thermal transport

Citation Formats

Deng, Bowen, Chenatynskiy, Aleksandr, Khafizov, Marat, Hurley, David, and Phillpot, Simon. Kapitza resistance of Si/SiO2 interface. United States: N. p., 2014. Web.
Deng, Bowen, Chenatynskiy, Aleksandr, Khafizov, Marat, Hurley, David, & Phillpot, Simon. Kapitza resistance of Si/SiO2 interface. United States.
Deng, Bowen, Chenatynskiy, Aleksandr, Khafizov, Marat, Hurley, David, and Phillpot, Simon. 2014. "Kapitza resistance of Si/SiO2 interface". United States.
@article{osti_1129966,
title = {Kapitza resistance of Si/SiO2 interface},
author = {Deng, Bowen and Chenatynskiy, Aleksandr and Khafizov, Marat and Hurley, David and Phillpot, Simon},
abstractNote = {A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.},
doi = {},
url = {https://www.osti.gov/biblio/1129966}, journal = {Journal of Applied Physics},
number = 8,
volume = 115,
place = {United States},
year = {Sat Feb 01 00:00:00 EST 2014},
month = {Sat Feb 01 00:00:00 EST 2014}
}