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Title: Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K.

Authors:
;
Publication Date:
OSTI Identifier:
1128733
Report Number(s):
FERMILAB-PUB-13-331-PPD
DOE Contract Number:
AC02-07CH11359
Resource Type:
Journal Article
Research Org:
Fermi National Accelerator Laboratory (FNAL), Batavia, IL
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English