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Title: Mutually injection locked lasers for enhanced frequency response

Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
1128693
Report Number(s):
8,687,665
13/233,221
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Research Org:
SNL (Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION