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Title: Trench process and structure for backside contact solar cells with polysilicon doped regions

Patent ·
OSTI ID:1127135
; ;

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Research Organization:
SunPower Corporation, San Jose, CA, USA
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07G017043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
8,673,673
Application Number:
13/872,961
OSTI ID:
1127135
Country of Publication:
United States
Language:
English

References (43)

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Trench process and structure for backside contact solar cells with polysilicon doped regions patent October 2010
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Trench process and structure for backside contact solar cells with polysilicon doped regions patent December 2010
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