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Title: Effect of low dose -irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors

Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1] ;  [3] ;  [3] ;  [3] ;  [3] ;  [3] ;  [3] ;  [4] ;  [4] ;  [4] ;  [5]
  1. University of Florida
  2. University of Florida, Gainesville
  3. University of Central Florida, Orlando
  4. Sandia National Laboratories (SNL)
  5. ORNL
Publication Date:
OSTI Identifier:
1126552
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science & Technology B; Journal Volume: 32; Journal Issue: 3
Research Org:
Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
SC USDOE - Office of Science (SC)
Country of Publication:
United States
Language:
English