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Title: Analysis of Channel Confined Growth for Single-Crystalline GaN Layers on SiO2.

Abstract not provided.
Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1124236
Report Number(s):
SAND2013-10757J
492888
DOE Contract Number:
DE-AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystal Growth&Design; Related Information: Proposed for publication in Crystal Growth&Design.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English