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Title: Influence of Growth Temperature and Temperature Ramps on Deep Level Defect Incorporation in m-plane GaN.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1123404
Report Number(s):
SAND2013-10610J
Journal ID: ISSN 0003-6951; 492202
DOE Contract Number:
DE-AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Related Information: Proposed for publication in Applied Physics Letters.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English