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Title: IMPACT OF DIELECTRIC PARAMETERS ON THE REFLECTIVITY OF 3C-SiC WAFERS WITH A ROUGH SURFACE MORPHOLOGY IN THE RESTSTRAHLEN REGION

A layer-on-substrate model is used to obtain the infrared reflectance for 3C-SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C-SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
1122124
Report Number(s):
INL/JOU-12-25195
Journal ID: ISSN 0921-4526
DOE Contract Number:
DE-AC07-05ID14517
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physica B: Condensed Matter; Journal Volume: 439
Research Org:
Idaho National Laboratory (INL)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS DIELECTRIC PARAMETERS; infrared reflectance; layer-on-substrate; MORPHOLOGY; Reststrahlen region; SiC Wafers