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Title: Characterization Of Superconducting Samples With SIC System For Thin Film Developments: Status And Recent Results

Within any thin film development program directed towards SRF accelerating structures, there is a need for an RF characterization device that can provide information about RF properties of small samples. The current installation of the RF characterization device at Jefferson Lab is Surface Impedance Characterization (SIC) system. The data acquisition environment for the system has recently been improved to allow for automated measurement, and the system has been routinely used for characterization of bulk Nb, films of Nb on Cu, MgB{sub 2}, NbTiN, Nb{sub 3}Sn films, etc. We present some of the recent results that illustrate present capabilities and limitations of the system.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1]
  1. Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
  2. Brookhaven National Lab, Upton, NY (United States)
Publication Date:
OSTI Identifier:
1121257
Report Number(s):
JLAB-ACC--13-1706; DOE/OR/23177-2829; TUP070
TRN: US1400252
DOE Contract Number:
AC05-06OR23177
Resource Type:
Conference
Resource Relation:
Conference: SRF 2013 (RF Superconductivity), Paris (France), 23-27 Sep 2013
Research Org:
Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
Sponsoring Org:
USDOE Office of Science (SC) (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS