skip to main content

SciTech ConnectSciTech Connect

Title: Development of Spintronic Bandgap Materials

The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for “spintronics bandgap materials”. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.
Authors:
; ;
Publication Date:
OSTI Identifier:
1120126
Report Number(s):
DOE-UP-46421
DOE Contract Number:
FG02-07ER46421
Resource Type:
Technical Report
Research Org:
University of Pittsburgh
Sponsoring Org:
USDOE; Basic energy Sciences
Contributing Orgs:
University of Pittsburgh, UC Santa Barbara, University of Virginia
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Quantum Dots, Spintronics