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Title: Effects of contact resistance on electrical conductivity measurements of SiC-based materials

A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (Rc) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ~973 K. The Rc-values behaved similarly for each type of metallic electrode: Rc > ~1000 Ω cm2 at RT, decreasing continuously to ~1–10 Ω cm2 at 973 K. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. Finally, for the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.
Authors:
; ;
Publication Date:
OSTI Identifier:
1117077
Report Number(s):
PNNL-SA-98386
Journal ID: ISSN 0022-3115; AT6020100
DOE Contract Number:
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Nuclear Materials; Journal Volume: 442; Journal Issue: S1
Publisher:
Elsevier
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
SiC; CVD-SiC; electrical resistivity; contact resistance