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Title: Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1115998
Report Number(s):
SAND2013-9232C
Journal ID: ISSN 1938--6737; 480039
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Journal Volume: 58; Journal Issue: 7; Conference: Proposed for presentation at the Electrochemical Society Meeting held October 27 - November 1, 2013 in San Francisco, CA.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English