Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Abstract not provided.
- Publication Date:
- OSTI Identifier:
- Report Number(s):
Journal ID: ISSN 1938--6737; 480039
- DOE Contract Number:
- Resource Type:
- Resource Relation:
- Journal Volume: 58; Journal Issue: 7; Conference: Proposed for presentation at the Electrochemical Society Meeting held October 27 - November 1, 2013 in San Francisco, CA.
- Research Org:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org:
- USDOE National Nuclear Security Administration (NNSA)
- Country of Publication:
- United States
Enter terms in the toolbar above to search the full text of this document for pages containing specific keywords.