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Title: The Energetic Neutral Atom Beam Lithography & Epitaxy (ENABLE) Capability at LANL: GaN-related Materials

A presentation that describes active ENABLE-based research projects.
Authors:
 [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
OSTI Identifier:
1115548
Report Number(s):
LA-UR--14-20324
DOE Contract Number:
AC52-06NA25396
Resource Type:
Technical Report
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Laboratory Directed Research and Development (LDRD) Program
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION Material Science; ENABLE capability Nitride Semiconductor Materials GaN, AlN, InGaN