Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation
Journal Article
·
· Applied Physics Letters, 103(17):Article No. 171602
The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1114100
- Report Number(s):
- PNNL-SA-98838; 35219; KP1704020
- Journal Information:
- Applied Physics Letters, 103(17):Article No. 171602, Journal Name: Applied Physics Letters, 103(17):Article No. 171602
- Country of Publication:
- United States
- Language:
- English
Similar Records
P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide
Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors
Journal Article
·
Wed May 29 00:00:00 EDT 2019
· SID Symposium Digest of Technical Papers
·
OSTI ID:1114100
+4 more
Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
Journal Article
·
Mon Jul 14 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:1114100
Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors
Journal Article
·
Mon Oct 13 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:1114100
+4 more