The Effect of Growth Parameters on the Mg Acceptor InxGa1-xN:Mg and AlxGa1-xN:Mg.

Conference · Sun Sep 01 00:00:00 EDT 2013

OSTI ID:1110537

Koleske, Daniel; Allerman, Andrew A.; Willoughby, W. R.; Zvanut, M. E.; Sunay, Ustun R.; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1110537
• Report Number(s): SAND2013-7711C; 474029
• Resource Relation: Conference: Proposed for presentation at the 10th International Conference on Nitride Semiconductors held August 25-30, 2013 in Washington , DC.
• Country of Publication: United States
• Language: English