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Title: The Effect of Growth Parameters on the Mg Acceptor InxGa1-xN:Mg and AlxGa1-xN:Mg.

Abstract not provided.
Authors:
; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1110537
Report Number(s):
SAND2013-7711C
474029
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 10th International Conference on Nitride Semiconductors held August 25-30, 2013 in Washington , DC.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English