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Title: Layered semiconductor neutron detectors

Patent ·
OSTI ID:1109473

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
8,604,441
Application Number:
12/999,909
OSTI ID:
1109473
Country of Publication:
United States
Language:
English

References (9)

Detector for detecting particle beams and method for the production thereof patent September 2007
Electronically gated microstructure patent May 2001
Boron-carbide solid state neutron detector and method of using the same patent August 2004
Detector having a thin film of boron nitride (BN) such as cubic BN and method, systems and array utilizing same patent July 2011
Solid-state thermal neutron detector patent May 2008
Solid state neutron detector array patent August 1999
Monitoring of neutron and gamma radiation patent October 1999
Non-Streaming High-Efficiency Perforated Semiconductor Neutron Detectors, Methods of Making Same and Measuring Wand and Detector Modules Utilizing Same patent-application December 2009
Nanolasers: lasing from nanoscale quantum wires journal January 2004