Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
- Research Organization:
- William Marsh Rice University, Houston, TX, USA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-05G015073; AC05-000R22725
- Assignee:
- William Marsh Rice University (Houston, TX)
- Patent Number(s):
- 8,592,791
- Application Number:
- 12/848,626
- OSTI ID:
- 1109089
- Country of Publication:
- United States
- Language:
- English
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journal | December 2009 |
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journal | September 1970 |
A model for filament growth and switching in amorphous oxide films
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journal | April 1970 |
Etching-dependent reproducible memory switching in vertical SiO2 structures
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journal | December 2008 |
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