Bypass diode for a solar cell
Patent
·
OSTI ID:1107919
Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.
- Research Organization:
- SunPower Corporation (San Jose, CA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07G017043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 8,580,599
- Application Number:
- 13/371,241
- OSTI ID:
- 1107919
- Country of Publication:
- United States
- Language:
- English
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