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Title: Optical XOR gate

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.
Authors:
Publication Date:
OSTI Identifier:
1107893
Report Number(s):
8,582,931
12/973,470
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Research Org:
SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING