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Title: Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics

Journal Article · · Nature
DOI:https://doi.org/10.1038/nature12582· OSTI ID:1105938
 [1];  [2];  [3];  [3];  [4];  [1];  [1];  [3];  [3];  [5];  [6];  [7];  [8];  [3];  [3];  [7];  [9];  [1];  [4];  [10] more »;  [3];  [11];  [12];  [3];  [3] « less
  1. Pennsylvania State University, University Park, PA
  2. University of Maryland and NIST
  3. Cornell University
  4. Institute of Physics ASCR
  5. ORNL
  6. Pennsylvania State University
  7. Leibniz Institute for Crystal Growth, Berlin, Germany
  8. University of Texas at Austin
  9. Temple University
  10. Institute of Physics, Czech Republic
  11. University of Maryland
  12. National Institute of Standards and Technology (NIST)

The miniaturization and integration of frequency-agile microwave circuits tunable filters, resonators, phase shifters and more with microelectronics offers tantalizing device possibilities, yet requires thin films whose dielectric constant at GHz frequencies can be tuned by applying a quasi-static electric field . Appropriate systems, e.g., BaxSr1 xTiO3, have a paraelectric-to-ferroelectric transition just below ambient temperature, providing high tunability1 . Unfortunately such films suffer significant losses arising from defects. Recognizing that progress is stymied by dielectric loss, we start with a system with exceptionally low loss Srn+1TinO3n+1 phases , where (SrO)2 crystallographic shear , planes provide an alternative to point defect formation for accommodating non-stoichiometry , . Here, we report the experimental realization of a highly tunable ground state arising from the emergence of a local ferroelectric instability in biaxially strained Srn+1TinO3n+1 phases with n 3 at frequencies up to 120 GHz. In contrast to traditional methods of modifying ferroelectrics doping or strain in this rather unique system increasing the separation between the (SrO)2 planes bolsters the local ferroelectric instability. This new control parameter, n, can be exploited to achieve a figure of merit at room temperature that rivals all known tunable microwave dielectrics.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
DE-AC05-00OR22725
OSTI ID:
1105938
Journal Information:
Nature, Vol. 502, Issue 7472; ISSN 0028--0836
Country of Publication:
United States
Language:
English

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