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Title: Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys Ga x In 1 x P

Journal Article · · Physical Review B

Sponsoring Organization:
USDOE
OSTI ID:
1100327
Journal Information:
Physical Review B, Journal Name: Physical Review B Vol. 83 Journal Issue: 16; ISSN 1098-0121
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 15 works
Citation information provided by
Web of Science

References (15)

Interplay of alloying and ordering on the electronic structure of GaxIn1xP alloys journal December 2008
Special quasirandom structures journal July 1990
Exciton transfer at low temperature in Ga x In 1 x P:N and GaAs 1 x P x :N journal April 1985
Superlattice and Negative Differential Conductivity in Semiconductors journal January 1970
Solving Schrödinger’s equation around a desired energy: Application to silicon quantum dots journal February 1994
Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys journal September 2001
“Majority Representation” of Alloy Electronic States journal May 1998
Dependence of the band structure on the order parameter for partially ordered Ga x In 1 x P alloys journal May 2001
Band‐gap reduction and valence‐band splitting of ordered GaInP 2 journal October 1995
Non-Bloch Nature of Alloy States in a Conventional Semiconductor Alloy GaxIn1xPas an Example journal July 2008
CuPt ordering in high bandgap GaxIn1−xP alloys on relaxed GaAsP step grades journal September 2009
Electronic structure of Hg 1 x Cd x Te journal January 1983
Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure journal May 1966
Effective Band Structure of Random Alloys journal June 2010
Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots journal February 1999

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