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Title: The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe

The variation in bulk resistivity during infrared (IR) illumination above 950 nm of state-of-the-art CdZnTe (CZT) crystals grown using the traveling heating method or the modified Bridgman method is documented. The change in steady-state current with and without illumination is also evaluated. The influence of secondary phases (SP) on current-voltage (I-V) characteristics is discussed using IR transmission microscopy to determine the defect concentration within the crystal bulk. SP present within the CZT are connected to the existence of deep, IR-excitable traps within the bandgap.
Authors:
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Publication Date:
OSTI Identifier:
1097608
Report Number(s):
SRNL-STI-2013-00475
Journal ID: ISSN 0361-5235
DOE Contract Number:
DE-AC09-08SR22470
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 42; Journal Issue: 11
Publisher:
Springer
Research Org:
Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE