Electronic Structure Study of N, O Related Defects in GaP for Photoelectrochemical Applications
Journal Article
·
· Journal of Materials Chemistry A
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy Fuel Cell Technologies Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1097307
- Journal Information:
- Journal of Materials Chemistry A, Vol. 1, Issue 29, 7 August 2013
- Country of Publication:
- United States
- Language:
- English
Similar Records
High resolution transmission electron microscopy study of interface structures and growth defects in epitaxial Bi{sub 2}Sr{sub 2}Ca{sub {ital n}{minus}1}Cu{sub {ital n}}O{sub 4+2{ital n}+{delta}} films on SrTiO{sub 3} and LaAlO{sub 3}
Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting
Band gap and electronic structure of defects in the ternary nitride BP3N6: experiment and theory
Journal Article
·
Tue Oct 01 00:00:00 EDT 1996
· Journal of Materials Research
·
OSTI ID:1097307
+6 more
Synthesis and Characterization of Band Gap-Reduced ZnO:N and ZnO:(Al,N) Films for Photoelectrochemical Water Splitting
Journal Article
·
Fri Jan 01 00:00:00 EST 2010
· Journal of Materials Research
·
OSTI ID:1097307
+5 more
Band gap and electronic structure of defects in the ternary nitride BP3N6: experiment and theory
Journal Article
·
Wed Mar 30 00:00:00 EDT 2022
· Journal of Materials Chemistry C
·
OSTI ID:1097307
+4 more