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Title: Bi-Se doped with Cu, p-type semiconductor

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
Authors:
; ;
Publication Date:
OSTI Identifier:
1093242
Report Number(s):
8,513,050
12/815,585
DOE Contract Number:
AC36-98G010337
Resource Type:
Patent
Research Org:
U.S. Department of Energy (Washington, DC)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE