Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects
Abstract
Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.
- Authors:
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1091463
- Report Number(s):
- PNNL-SA-95857
- DOE Contract Number:
- AC05-76RL01830
- Resource Type:
- Journal Article
- Journal Name:
- Optical Materials Express, 3(9):1273-1278
- Additional Journal Information:
- Journal Name: Optical Materials Express, 3(9):1273-1278
- Country of Publication:
- United States
- Language:
- English
- Subject:
- ZnS; Fluorescent and luminescent materials; Spectroscopy, fluorescence and luminescence; Infrared
Citation Formats
McCloy, John S., and Potter, B. g. Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects. United States: N. p., 2013.
Web. doi:10.1364/OME.3.001273.
McCloy, John S., & Potter, B. g. Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects. United States. https://doi.org/10.1364/OME.3.001273
McCloy, John S., and Potter, B. g. 2013.
"Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects". United States. https://doi.org/10.1364/OME.3.001273.
@article{osti_1091463,
title = {Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects},
author = {McCloy, John S. and Potter, B. g.},
abstractNote = {Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.},
doi = {10.1364/OME.3.001273},
url = {https://www.osti.gov/biblio/1091463},
journal = {Optical Materials Express, 3(9):1273-1278},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 09 00:00:00 EDT 2013},
month = {Fri Aug 09 00:00:00 EDT 2013}
}
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