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Title: Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects

Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.
Authors:
;
Publication Date:
OSTI Identifier:
1091463
Report Number(s):
PNNL-SA-95857
DOE Contract Number:
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Optical Materials Express, 3(9):1273-1278
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
ZnS; Fluorescent and luminescent materials; Spectroscopy, fluorescence and luminescence; Infrared