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Title: Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects

Abstract

Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

Authors:
;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1091463
Report Number(s):
PNNL-SA-95857
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Optical Materials Express, 3(9):1273-1278
Additional Journal Information:
Journal Name: Optical Materials Express, 3(9):1273-1278
Country of Publication:
United States
Language:
English
Subject:
ZnS; Fluorescent and luminescent materials; Spectroscopy, fluorescence and luminescence; Infrared

Citation Formats

McCloy, John S., and Potter, B. g. Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects. United States: N. p., 2013. Web. doi:10.1364/OME.3.001273.
McCloy, John S., & Potter, B. g. Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects. United States. https://doi.org/10.1364/OME.3.001273
McCloy, John S., and Potter, B. g. 2013. "Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects". United States. https://doi.org/10.1364/OME.3.001273.
@article{osti_1091463,
title = {Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects},
author = {McCloy, John S. and Potter, B. g.},
abstractNote = {Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.},
doi = {10.1364/OME.3.001273},
url = {https://www.osti.gov/biblio/1091463}, journal = {Optical Materials Express, 3(9):1273-1278},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 09 00:00:00 EDT 2013},
month = {Fri Aug 09 00:00:00 EDT 2013}
}