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Title: Ion Distribution And Electronic Stopping Power For Au ions In Silicon Carbide

Accurate knowledge of ion distribution and electronic stopping power for heavy ions in light targets is highly desired due to the large errors in prediction by the widely used Stopping and Range of Ions in Matter (SRIM) code. In this study, Rutherford backscattering spectrometry (RBS)and secondary ion mass spectrometry (SIMS) are used as complementary techniques to determine the distribution of Au ions in SiC with energie sfrom 700 keV to 15 MeV. In addition, asingle ion technique with an improved data analysis procedure is applied to measure the electronic stopping power for Au ions in SiC with energies up to ~70 keV/nucleon. Large overestimation of the electronic stopping power is found by SRIM prediction in the low energy regime up to ~50 keV/nucleon. The stopping power data and the ion ranges are crosschecked with each other and a good agreement is achieved.
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Publication Date:
OSTI Identifier:
Report Number(s):
47459; KP1704020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 307:65-70
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
Environmental Molecular Sciences Laboratory