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Title: In-Situ Measurement of Crystalline Silicon Modules Undergoing Potential-Induced Degradation in Damp Heat Stress Testing for Estimation of Low-Light Power Performance

The extent of potential-induced degradation of crystalline silicon modules in an environmental chamber is estimated using in-situ dark I-V measurements and applying superposition analysis. The dark I-V curves are shown to correctly give the module power performance at 200, 600 and 1,000 W/m2 irradiance conditions, as verified with a solar simulator. The onset of degradation measured in low light in relation to that under one sun irradiance can be clearly seen in the module design examined; the time to 5% relative degradation measured in low light (200 W/m2) was 28% less than that of full sun (1,000 W/m2 irradiance). The power of modules undergoing potential-induced degradation can therefore be characterized in the chamber, facilitating statistical analyses and lifetime forecasting.
Authors:
; ;
Publication Date:
OSTI Identifier:
1090973
Report Number(s):
NREL/TP-5200-60044
DOE Contract Number:
AC36-08GO28308
Resource Type:
Technical Report
Research Org:
National Renewable Energy Laboratory (NREL), Golden, CO.
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 42 ENGINEERING PV; DEGRADATION; CRYSTALLINE SILICON; Solar Energy - Photovoltaics