Method of manufacture of atomically thin boron nitride
The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 8,501,024
- Application Number:
- 12/895,624
- OSTI ID:
- 1089414
- Country of Publication:
- United States
- Language:
- English
Similar Records
Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching
Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications