Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4804240· OSTI ID:1089266

Jacimovic, J ^[1]; Gaal, R ^[2]; Magrez, Arnaud ^[3]; Forro, Laszlo ^[3]; Regmi, Murari ^[4]; Eres, Gyula ^[3]

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1. EPFL, Lausanne, Switzerland
2. Institute of Condensed Matter Physics, EPFL, Lausanne, Switzerland
3. ORNL
4. Oak Ridge National Laboratory (ORNL)

The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1089266
• Journal Information: Applied Physics Letters, Vol. 102, Issue 17; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

co-doped
TiO2
PLD