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Title: Method of forming contacts for a back-contact solar cell

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
Authors:
Publication Date:
OSTI Identifier:
1088686
Report Number(s):
8,492,253
12/959,199
DOE Contract Number:
FC36-07GO17043
Resource Type:
Patent
Research Org:
SunPower Corporation (San Jose, CA)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY