Final Report: Stability and Novel Properties of Magnetic Materials and Ferromagnet / Insulator Interfaces
- Univ. of Wisconsin, Madison, WI (United States)
We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates. Our primary focus is materials with very high, negative, intrinsic spin polarization of the density of states at the Fermi level. We have developed a new synthesis method for Fe3O4 thin films through selective oxidation of Fe, resulting in smooth, low-defect density films. We have synthesized Fe4N films and shown that they preferentially oxidize to Fe3O4. When integrated into magnetic tunnel junctions consisting of Fe4N / AlOx / Fe, oxidation at the Fe4N / AlOx interface creates Fe3O4, leading to negative tunneling magnetoresistance (TMR). Oxidation of Fe in nominally symmetric CoFe / AlOx / CoFe also produces Fe3O4 and negative TMR under selected oxidation conditions.
- Research Organization:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- FG02-99ER45777
- OSTI ID:
- 1088313
- Report Number(s):
- DOE/ER-45777-2
- Country of Publication:
- United States
- Language:
- English
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