Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria
- CEA, Saclay, France
- ORNL
- Pacific Northwest National Laboratory (PNNL)
- University of Oxford
- University of Nebraska Medical Center
Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300 K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1083725
- Journal Information:
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 307; ISSN 0168-583X
- Country of Publication:
- United States
- Language:
- English
Similar Records
MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate
MeV Au Ion Irradiation in Silicon and Nanocrystalline Zirconia Film Deposited on Silicon Substrate