Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires
- Naval Postgraduate School, Monterey, CA (United States). Dept. of Physics
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Minority carrier diffusion lengths Ld are calculated for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a procedure based on imaging of recombination luminescence. The result of shell material on conveyance properties is recorded. An AlGaN shell produces Ld values in surplus of 1μm and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of Ld on diameter is observed for unshielded nanowires.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AC04-94AL85000; DMR 0804527; 61101E
- OSTI ID:
- 1065706
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 13; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0003-6951: APPLAB
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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