A search for spin-polarized photoemission from GaAs using light with orbital angular momentum
Journal Article
·
· PHYSICAL REVIEW B
Laser light with photon energy near the bandgap of GaAs and with different amounts of orbital angular momentum was used to produce photoemission from unstrained GaAs. The degree of electron spin polarization was measured using a micro-Mott polarimeter and found to be consistent with zero with an upper limit of ~3% for light with up to ±5{bar h} of orbital angular momentum. In contrast, the degree of spin polarization was 32.32 ± 1.35% using circularly-polarized laser light at the same wavelength, which is typical of bulk GaAs.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-06OR23177
- OSTI ID:
- 1062034
- Report Number(s):
- JLAB-ACC-12-1620; DOE/OR/23177-2477
- Journal Information:
- PHYSICAL REVIEW B, Vol. 87, Issue 3
- Country of Publication:
- United States
- Language:
- English
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