UV Ozone Treatment for Improving Contact Resistance on Graphene

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Journal of Vacuum Science & Technology B

DOI:https://doi.org/10.1116/1.4754566· OSTI ID:1052259

Chen, Chung Wei ^[1]; Ren, F. ^[2]; Chi, G. C. ^[3]; Hung, S. C. ^[1]; Huang, Y. P. ^[1]; Kim, J. ^[4]; Kravchenko, Ivan I ^[5]

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1. National Central University, Taiwan
2. University of Florida
3. National Chiao Tung University, Hsinchu, Taiwan
4. Korea University
5. ORNL

Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3x10-6 -cm2) compared to untreated surfaces (4x10-3 -cm2). Subsequent annealing at 300 C lowers the minimum value achieved to 7x10-7 -cm2. Ozone exposure beyond an optimum time (6 mins in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1052259
• Journal Information: Journal of Vacuum Science & Technology B, Vol. 30, Issue 6; ISSN 2166-2746
• Country of Publication: United States
• Language: English