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Title: Surfactant assisted growth of MgO films on GaN

Abstract

Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1];  [2];  [1]
  1. North Carolina State University
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1052243
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 9; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
epitaxy; oxide; GaN; surfactant; MgO

Citation Formats

Paisley, Elisibeth A., Shelton, T C, Mita, S, Gaddy, Brian E., Irving, D L, Christen, Hans M, Sitar, Z, Biegalski, Michael D, and Maria, Jon Paul. Surfactant assisted growth of MgO films on GaN. United States: N. p., 2012. Web. doi:10.1063/1.4748886.
Paisley, Elisibeth A., Shelton, T C, Mita, S, Gaddy, Brian E., Irving, D L, Christen, Hans M, Sitar, Z, Biegalski, Michael D, & Maria, Jon Paul. Surfactant assisted growth of MgO films on GaN. United States. https://doi.org/10.1063/1.4748886
Paisley, Elisibeth A., Shelton, T C, Mita, S, Gaddy, Brian E., Irving, D L, Christen, Hans M, Sitar, Z, Biegalski, Michael D, and Maria, Jon Paul. 2012. "Surfactant assisted growth of MgO films on GaN". United States. https://doi.org/10.1063/1.4748886.
@article{osti_1052243,
title = {Surfactant assisted growth of MgO films on GaN},
author = {Paisley, Elisibeth A. and Shelton, T C and Mita, S and Gaddy, Brian E. and Irving, D L and Christen, Hans M and Sitar, Z and Biegalski, Michael D and Maria, Jon Paul},
abstractNote = {Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.},
doi = {10.1063/1.4748886},
url = {https://www.osti.gov/biblio/1052243}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 101,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2012},
month = {Sun Jan 01 00:00:00 EST 2012}
}