Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties
Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices corresponding efficiency and open-circuit voltage (V{sub OC}), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1050118
- Report Number(s):
- NREL/JA-5200-55921; TRN: US201218%%486
- Journal Information:
- Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, Vol. 30, Issue 4; Related Information: Article No. 04D111
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
BRIGHTNESS
BYPASSES
CAMERAS
DEFECTS
DEPOSITION
EFFICIENCY
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
PERFORMANCE
PHOTOLUMINESCENCE
PROCESSING
SCANNING ELECTRON MICROSCOPY
SOLAR CELLS
THERMOGRAPHY
metal oxides
solar cells
electroluminescence
lasers
microstructural properties
photoluminescence
thermography
transition metal chalcogenides
scanning electron microscopy
electrical properties and parameters