Prototyping and Development of Commercial Nano Crystalline and Thin Film Silicon for Photovoltaic Manufacturing
The College of Nanoscale Science and Engineering (CNSE) at the University at Albany received funding from the Department of Energy for its proposal Prototyping and Development of Commercial Nanocrystalline and Thin Film Si for Photovoltaic Manufacturing. This project was created to identify growth rate, texture uniformity, process window, economics, composition and thickness uniformity solutions related to fabricating large area, high efficiency thin film silicon based solar cells. This document serves as a final report for the closure of this program and details the deliverables from CNSE against its original scope of work. Thin-film silicon solar cells are a promising candidate for electricity generation applications because of a combination of advantages. Nanocrystalline and poly-Si based thin films, reduces the use of expensive semiconductor material content, can be deposited onto a foreign substrate (e.g. glass or flexible stainless steel) and enables use of the cells in wide variety of applications. In addition, nano and poly-Si films have higher carrier mobility as well as reduce recombination effects, relative to traditional amorphous-silicon films. They can be mass-produced at low cost, and expected to have a strong position in the international photovoltaic industry, which is experiencing a compounded annual growth of 25%. The objectives included: Demonstration of high rate VHF (Very High Frequency) growth of nc-Si over large areas with uniform thickness. Demonstration of single chamber device growth that allows mass production processing. Demonstration of uniform segmented electrodes. Development of computer models to accelerate efforts. Demonstration of large grain thin film polycrystalline silicon films fabrication. Utilizing the AIC (Aluminum Induced Crystallization) process for large grain silicon film fabrication. Demonstration of 12% efficient nanocrystalline and polycrystalline thin film devices. The end result expected was the production of high-efficiency, low-cost thin film Si devices with reduced cost per watt, allowing dramatically increased market penetration. While further research is required to meet these ultimate goals, this project proved its feasibility.
- Research Organization:
- The Research Foundation of SUNY, 257 Fuller Road, Albany, NY 12203-3640
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0003178
- OSTI ID:
- 1049046
- Report Number(s):
- DOE/EE/03178-1
- Country of Publication:
- United States
- Language:
- English
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