Measurement of the dielectric properties of high-purity sapphire at 1.865 GHZ from 2-10 Kelvin

Conference · Fri Jun 01 00:00:00 EDT 2012 · AIP Conf. Proc.

DOI:https://doi.org/10.1063/1.4707011· OSTI ID:1046955

N. Pogue, P. McIntyre, Akhdiyor Sattarov, Charles Reece

A dielectric test cavity was designed and tested to measure the microwave dielectric properties of ultrapure sapphire at cryogenic temperatures. Measurements were performed by placing a large cylindrical crystal of sapphire in a Nb superconducting cavity operating in the TE01 mode at 1.865 GHz. The dielectric constant, heat capacity, and loss tangent were all calculated using experimental data and RF modeling software. The motivation for these measurements was to determine if such a sapphire could be used as a dielectric lens to focus the magnetic field onto a sample wafer in a high field wafer test cavity. The measured properties have been used to finalize the design of the wafer test cavity.

• Research Organization: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 1046955
• Report Number(s): JLAB-ACC-11-1476; DOE/OR/23177-2228; TRN: US201215%%616
• Journal Information: AIP Conf. Proc., Vol. 1434; Conference: 2011 Cryogenic Engineering Conference & International Cryogenic Materials Conference, 13-17 June 2011, Spokane, WA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYOGENICS
DESIGN
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
MAGNETIC FIELDS
PERMITTIVITY
SAPPHIRE
SIMULATION
SPECIFIC HEAT