Spectral Optical Properties of Cu2ZnSnS4 Thin Film Between 0.73 and 6.5 eV
A polycrystalline Cu{sub 2}ZnSnS{sub 4} thin film was deposited on fused quartz by co-evaporation. The selected thickness was {approx}100 nm to avoid artifacts in its optical properties caused by thicker as-grown films. The composition and phase of the film were checked with x-ray fluorescence, Raman shift spectroscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. An improved spectroscopic ellipsometry methodology with two-side measurement geometries was applied to extract the complex dielectric function {var_epsilon} = {var_epsilon}{sub 1} + i{var_epsilon}{sub 2} of the Cu{sub 2}ZnSnS{sub 4} thin film between 0.73 and 6.5 eV. Five critical points were observed, at 1.32 (fundamental band gap), 2.92, 3.92, 4.96, and 5.62 eV, respectively. The {var_epsilon} spectra are in reasonable agreement with those from theoretical calculations.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1044438
- Report Number(s):
- NREL/JA-5200-54365; TRN: US201214%%418
- Journal Information:
- Optics Express, Vol. 20, Issue S2; ISSN 1094-4087
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV
Synthesis of Cu{sub 2}ZnSnS{sub 4} nanoparticles and controlling the morphology with polyethylene glycol