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Title: Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film

Abstract

We investigated the scaling behavior of ferroelectric (FE) hysteresis loops as a function of the applied field amplitude (E{sub 0}) in a high-quality epitaxial PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT) thin film. We observed that the areas of the polarization-electric field hysteresis loops (A) followed the scaling law A {proportional_to} E{sub 0}{sup {alpha}}, with the exponent {alpha} = 0.45 {+-} 0.01. This result is in excellent agreement with the theoretical prediction of {alpha} by the two-dimensional Ising model. In addition, we found that the coercive field (E{sub C}) showed E{sub C} {proportional_to} E{sub 0}{sup {gamma}} with the exponent {gamma} = 0.28 {+-} 0.01. We attribute this relationship to the difference in the sweep rate of the field amplitude E{sub 0}. From the obtained {gamma} value, the growth dimension of FE domains is found to be about 1.68 in our epitaxial PZT thin film.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Seoul National University
  2. ORNL
  3. University of Suwon
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1042762
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal - Korean Physical Society
Additional Journal Information:
Journal Volume: 58; Journal Issue: 3; Journal ID: ISSN 0374-4884
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMPLITUDES; DIMENSIONS; FORECASTING; HYSTERESIS; ISING MODEL; SCALING LAWS; THIN FILMS

Citation Formats

Yang, Sang Mo, Jang, S. Y., Kim, T. H., Kim, Hun-Ho, Lee, Ho Nyung, and Yoon, J. -G. Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film. United States: N. p., 2011. Web.
Yang, Sang Mo, Jang, S. Y., Kim, T. H., Kim, Hun-Ho, Lee, Ho Nyung, & Yoon, J. -G. Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film. United States.
Yang, Sang Mo, Jang, S. Y., Kim, T. H., Kim, Hun-Ho, Lee, Ho Nyung, and Yoon, J. -G. 2011. "Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film". United States.
@article{osti_1042762,
title = {Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film},
author = {Yang, Sang Mo and Jang, S. Y. and Kim, T. H. and Kim, Hun-Ho and Lee, Ho Nyung and Yoon, J. -G.},
abstractNote = {We investigated the scaling behavior of ferroelectric (FE) hysteresis loops as a function of the applied field amplitude (E{sub 0}) in a high-quality epitaxial PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT) thin film. We observed that the areas of the polarization-electric field hysteresis loops (A) followed the scaling law A {proportional_to} E{sub 0}{sup {alpha}}, with the exponent {alpha} = 0.45 {+-} 0.01. This result is in excellent agreement with the theoretical prediction of {alpha} by the two-dimensional Ising model. In addition, we found that the coercive field (E{sub C}) showed E{sub C} {proportional_to} E{sub 0}{sup {gamma}} with the exponent {gamma} = 0.28 {+-} 0.01. We attribute this relationship to the difference in the sweep rate of the field amplitude E{sub 0}. From the obtained {gamma} value, the growth dimension of FE domains is found to be about 1.68 in our epitaxial PZT thin film.},
doi = {},
url = {https://www.osti.gov/biblio/1042762}, journal = {Journal - Korean Physical Society},
issn = {0374-4884},
number = 3,
volume = 58,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2011},
month = {Sat Jan 01 00:00:00 EST 2011}
}