Oxides Heterostructures for Nanoelectronics

Journal Article · Sat Dec 31 00:00:00 EST 2011 · International Journal of Nanotechnology

OSTI ID:1042247

Dubourdieu, C; Gelard, I; Salicio, O; Saint-Girons, G; Vilquin, B; Hollinger, G

We summarise in this paper the work of two groups focusing on the synthesis and characterisation of functional oxide for nanoelectronic applications. In the first section, we discuss the growth by liquid-injection MOCVD of oxides heterostructures. Interface engineering for the minimisation of silicate formation during the growth of polycrystalline SrTiO{sub 3} on Si is first presented. It is realised via the change of reactant flow or chemical nature at the Si surface. We then report on the epitaxy on oxide substrates of manganites films and superlattices and on their magnetic and electrical properties. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and La{sub 0.8}MnO{sub 3-{delta}} as well as multiferroic hexagonal ReMnO{sub 3} manganites are considered. We show that the film thickness and related strain may be used to tune the properties. Finally, we demonstrate the growth of MgO nanowires by CVD at a moderate temperature of 600 C, using gold as a catalyst. In the second section, we discuss the growth of epitaxial oxide heterostructures by MBE. First, the direct epitaxy of SrTiO{sub 3} on Si is considered. Issues and control of the SrTiO{sub 3}/Si interface are discussed. An abrupt interface is achieved. We show that SrTiO{sub 3} on Si can be used as a buffer layer for the epitaxy of various perovskite oxides such as LaAlO{sub 3} or La{sub 0.7}Sr0.3MnO{sub 3}. La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films are ferromagnetic and metallic at room temperature. The epitaxial growth of complex oxides on Si wafers opens up the route to the integration of a wide variety of functionalities in nanoelectronics. Finally, we discuss the monolithic integration of III-V compounds such as InP on Si using epitaxial SrTiO{sub 3} buffer layers for the future integration of optics on Si.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1042247
• Report Number(s): BNL-97925-2012-JA; TRN: US201212%%658
• Journal Information: International Journal of Nanotechnology, Vol. 7, Issue 4/5/6/7/8; ISSN 1475-7435
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
EPITAXY
FILMS
GOLD
GROWTH
INTERFACES
LAYERS
MAGNESIUM OXIDES
MAGNETIC PROPERTIES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
OPTICS
ORGANOMETALLIC COMPOUNDS
OXIDES
PEROVSKITES
QUANTUM WIRES
SILICON
SILICATES
STRAINS
STRONTIUM TITANATES
SUPERLATTICES
SYNTHESIS
THICKNESS
THIN FILMS