Desorption Induced Formation of Negative Nanowires in GaN
Abstract
We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.
- Authors:
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- DOE - OFFICE OF SCIENCE
- OSTI Identifier:
- 1026781
- Report Number(s):
- BNL-96238-2011-JA
Journal ID: ISSN 0022-0248; JCRGAE; R&D Project: NC-001; TRN: US201121%%90
- DOE Contract Number:
- DE-AC02-98CH10886
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 324; Journal Issue: 1; Journal ID: ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DESORPTION; DISSOCIATION; MONOCRYSTALS; PRISMS; PYROLYSIS; TRANSMISSION ELECTRON MICROSCOPY; Nanowire growth; Nanostructure growth; In-situ transmission electron microscopy; Vapor–liquid–solid mechanism; Solid–liquid–vapor mechanism; Solid–vapor mechanism
Citation Formats
Stach, E A, and Kim, B -J. Desorption Induced Formation of Negative Nanowires in GaN. United States: N. p., 2011.
Web.
Stach, E A, & Kim, B -J. Desorption Induced Formation of Negative Nanowires in GaN. United States.
Stach, E A, and Kim, B -J. 2011.
"Desorption Induced Formation of Negative Nanowires in GaN". United States.
@article{osti_1026781,
title = {Desorption Induced Formation of Negative Nanowires in GaN},
author = {Stach, E A and Kim, B -J},
abstractNote = {We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.},
doi = {},
url = {https://www.osti.gov/biblio/1026781},
journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = 1,
volume = 324,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2011},
month = {Wed Jun 01 00:00:00 EDT 2011}
}