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Title: Desorption Induced Formation of Negative Nanowires in GaN

Abstract

We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.

Authors:
;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
DOE - OFFICE OF SCIENCE
OSTI Identifier:
1026781
Report Number(s):
BNL-96238-2011-JA
Journal ID: ISSN 0022-0248; JCRGAE; R&D Project: NC-001; TRN: US201121%%90
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 324; Journal Issue: 1; Journal ID: ISSN 0022-0248
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DESORPTION; DISSOCIATION; MONOCRYSTALS; PRISMS; PYROLYSIS; TRANSMISSION ELECTRON MICROSCOPY; Nanowire growth; Nanostructure growth; In-situ transmission electron microscopy; Vapor–liquid–solid mechanism; Solid–liquid–vapor mechanism; Solid–vapor mechanism

Citation Formats

Stach, E A, and Kim, B -J. Desorption Induced Formation of Negative Nanowires in GaN. United States: N. p., 2011. Web.
Stach, E A, & Kim, B -J. Desorption Induced Formation of Negative Nanowires in GaN. United States.
Stach, E A, and Kim, B -J. 2011. "Desorption Induced Formation of Negative Nanowires in GaN". United States.
@article{osti_1026781,
title = {Desorption Induced Formation of Negative Nanowires in GaN},
author = {Stach, E A and Kim, B -J},
abstractNote = {We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.},
doi = {},
url = {https://www.osti.gov/biblio/1026781}, journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = 1,
volume = 324,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2011},
month = {Wed Jun 01 00:00:00 EDT 2011}
}