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Title: Atmospheric Pressure Synthesis of In2Se3, Cu2Se, and CuInSe2 without External Selenization from Solution Precursors

Journal Article · · Journal of Materials Research

In{sub 2}Se{sub 3}, Cu{sub 2}Se, and CuInSe{sub 2} thin films have been successfully fabricated using novel metal organic decomposition (MOD) precursors and atmospheric pressure-based deposition and processing. The phase evolution of the binary (In-Se and Cu-Se) and ternary (Cu-In-Se) MOD precursor films was examined during processing to evaluate the nature of the phase and composition changes. The In-Se binary precursor exhibits two specific phase regimes: (i) a cubic-InxSey phase at processing temperatures between 300 and 400 C and (ii) the {gamma}-In{sub 2}Se{sub 3} phase for films annealed above 450 C. Both phases exhibit a composition of 40 at.% indium and 60 at.% selenium. The binary Cu-Se precursor films show more diverse phase behavior, and within a narrow temperature processing range a number of Cu-Se phases, including CuSe{sub 2}, CuSe, and Cu{sub 2}Se, can be produced and stabilized. The ternary Cu-In-Se precursor can be used to produce relatively dense CuInSe{sub 2} films at temperatures between 300 and 500 C. Layering the binary precursors together has provided an approach to producing CuInSe{sub 2} thin films; however, the morphology of the layered binary structure exhibits a significant degree of porosity. An alternative method of layering was explored where the Cu-Se binary was layered on top of an existing indium-gallium-selenide layer and processed. This method produced highly dense and large-grained (>3 {micro}m) CuInSe{sub 2} thin films. This has significant potential as a manufacturable route to CIGS-based solar cells.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Solar Energy Technologies Program
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1023088
Journal Information:
Journal of Materials Research, Vol. 24, Issue 4, April 2009; ISSN 0884-2914
Country of Publication:
United States
Language:
English

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