TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

Conference · Tue Jan 01 00:00:00 EST 2008

OSTI ID:1021942

Beltran, AM ^[1]; Ben, Teresa ^[1]; Sanchez, AM ^[1]; Sales Lerida, David ^[2]; Chisholm, Matthew F ^[2]; Varela del Arco, Maria ^[2]; Pennycook, Stephen J ^[2]; Galindo, Pedro ^[1]; Ripalda, JM ^[3]; Molina Rubio, Sergio I ^[2]

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1. Universidad de Cadiz, Spain
2. ORNL
3. Instituto de Microelectronica de Madrid (CNM, CSIC)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1021942
• Resource Relation: Conference: European Microscopy Congress (EMC 2008), Aachen, Germany, 20080901, 20080905
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
INDIUM ARSENIDES
GALLIUM ARSENIDES
LAYERS
MICROSCOPY
NANOSTRUCTURES
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
RED SHIFT
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS
TEM
characterization
quantum dots