Characterization of 100 mm diameter 4H-silicon carbide crystals with extremely low basal plane dislocation density

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Materials Science Forum

DOI:https://doi.org/10.4028/www.scientific.net/MSF.645-648.291· OSTI ID:1020017

Dudley, M; Zhang, N; Zhang, Y; Raghothamachar, B; Byrappa, S; Choi, G; Sanchez, E; Hansen, D; Drachev, R; Loboda, M

Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: DOE - OFFICE OF SCIENCE
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1020017
• Report Number(s): BNL-95863-2011-JA; MSFOEP; TRN: US201116%%1
• Journal Information: Materials Science Forum, Vol. 645-648; ISSN 1662-9752
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBIDES
DISLOCATIONS
EDGE DISLOCATIONS
SYNCHROTRONS
TOPOGRAPHY
national synchrotron light source