Spectromicroscopy of tantalum oxide memristors.
- X-Ray Science Division
We report experiments to measure material changes in tantalum oxide-based memristive devices. The high endurance and low power demonstrated in this material system suggests a unique mechanism for the switching, which we investigated using x-ray based spectromicroscopy and nanospectroscopy. Our study nondestructively identified a localized (<150nm diameter) Ta-rich phase surrounded by nano- or polycrystalline Ta{sub 2}O{sub 5}.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 1019251
- Report Number(s):
- ANL/CNM/JA-70010; TRN: US201114%%721
- Journal Information:
- Appl. Phys. Lett., Vol. 98, Issue 24 ; Jun. 13, 2011
- Country of Publication:
- United States
- Language:
- ENGLISH
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