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Title: Proton irradiation effects on advanced digital and microwave III-V components

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Indiana University Cyclotron Facility, Bloomington, IN (United States)
Publication Date:
OSTI Identifier:
10182871
Report Number(s):
SAND--94-0205C; CONF-940726--14
ON: DE94018742; TRN: 94:008391
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 31. annual international nuclear and space radiation effects conference,Tucson, AZ (United States),18-22 Jul 1994; Other Information: PBD: [1994]
Research Org:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org:
USDOE, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; SATELLITES; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; IRRADIATION; RADIATION EFFECTS; MICROWAVE EQUIPMENT 440200; 663620; RADIATION EFFECTS ON INSTRUMENT COMPONENTS, INSTRUMENTS, OR ELECTRONIC SYSTEMS; PHYSICS OF RADIATIONS OTHER THAN NEUTRONS