Proton irradiation effects on advanced digital and microwave III-V components
- Sandia National Labs., Albuquerque, NM (United States)
- Indiana University Cyclotron Facility, Bloomington, IN (United States)
A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10182871
- Report Number(s):
- SAND-94-0205C; CONF-940726-14; ON: DE94018742; TRN: 94:008391
- Resource Relation:
- Conference: 31. annual international nuclear and space radiation effects conference,Tucson, AZ (United States),18-22 Jul 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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73 NUCLEAR PHYSICS AND RADIATION PHYSICS
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ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
IRRADIATION
RADIATION EFFECTS
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RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
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PHYSICS OF RADIATIONS OTHER THAN NEUTRONS