Thermal properties of silicon nitride beams below one Kelvin.
- Center for Nanoscale Materials
We have investigated thermal properties of 1 {micro}m thick silicon nitride beams of different lateral dimensions. We measured the thermal conductance by simultaneously employing a TES both as a heater and as a sensor. Based upon these measurements, we calculate the thermal conductivity of the beams. We utilize a boundary limited phonon transport model and assume a temperature independent phonon mean free path. We find that the thermal conductivity is determined by the fraction of diffusive reflection at surface. The following results are obtained from 0.30 K to 0.55 K: the volume heat capacity is 0.082T+0.502T{sup 3} J/m{sup 3}-K . The width dependent phonon mean free path is 6.58 {micro}m, 9.80 {micro}m and 11.55 {micro}m for 10 {micro}m, 20 {micro}m and 30 {micro}m beams respectively at a 29% surface diffusive reflection.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 1016467
- Report Number(s):
- ANL/MSD/CP-69488; TRN: US1103053
- Journal Information:
- IEEE Trans. Appl. Supercond., Vol. 21, Issue 3 ; Jun. 2011; Conference: Applied Superconductivity Conference (ASC 2010); Aug. 1, 2010 - Aug. 6, 2010; Washington, DC
- Country of Publication:
- United States
- Language:
- ENGLISH
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